Prof. Bae`s R.P.

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  • 34 J.-H. Bae, H. Kim, D. Kwon, S. Lim, S.-T. Lee, B.-G. Park, and J.-H. Lee "Reconfigurable Field-Effect-Transistor as a Synaptic Device for XNOR Binary Neural Network" IEEE Electron Device Letters, vol. 40, no. 4, pp. 624-627, doi: 10.1109/LED.2019.2898448, 2019-04
  • 33 N. Choi, H.-J. Kang, J.-H. Bae, B.-G. Park, and J.-H. Lee "Effect of Nitrogen Content in Tunneling Dielectric on Cell Properties of 3-D NAND Flash Cells" IEEE Electron Device Letters, vol. 40, no. 5, pp. 702-705, doi: 10.1109/LED.2019.2905299, 2019-03
  • 32 S. Lim, D. Kwon, J.-H. Eum, S.-T. Lee, J.-H. Bae, H. Kim, C.-H. Kim, B.-G. Park, and J.-H. Lee "Highly Reliable Inference System of Neural Networks Using Gated Schottky Diodes" IEEE Journal of the Electron Device Society, vol. 7, pp. 522-528, doi: 10.1109/JEDS.2019.2913146, 2019-04
  • 31 S. Y. Woo, K.-B. Choi, S. Lim, S.-T. Lee, C.-H. Kim, W.-M. Kang, D. Kwon, J.-H. Bae, B.-G. Park, and J.-H. Lee "Synaptic device using a floating fin-body MOSFET with memory functionality for neural network" Solid-State Electronics, vol. 156, pp. 23-27, doi: 10.1016/j.sse.2019.02.011, 2019-06
  • 30 J.-H. Bae, S. Lim, D. Kwon, J.-H. Eum, S. Lee, H. Kim, B.-G. Park, and J.-H. Lee "Near-Linear Potentiation Mechanism of Gated Schottky Diode as a Synaptic Device" IEEE Journal of the Electron Device Society, vol. 7, pp. 335-343, doi: 10.1109/JEDS.2019.2898674, 2019-02
  • 29 J.-H. Bae, J.-W. Back, M.-W. Kwon, J. H. Seo, K. Yoo, S. Y. Woo, K. Park, B.-G. Park, and J.-H. Lee "Characterization of a Capacitorless DRAM Cell for Cryogenic Memory Applications" IEEE Electron Device Letters, vol. 40, no. 10, pp. 1614-1617, doi: 10.1109/LED.2019.2933504, 2019-08
  • 28 Y.-T. Seo, M.-S. Lee, C.-H. Kim, S. Y. Woo, J.-H. Bae, B.-G. Park, and J.-H. Lee "Si-based FET-type synaptic device with short-term and long-term plasticity using high-k gate stack" IEEE Transactions on Electron Devices, vol. 66, no. 2, pp. 917-923, doi: 10.1109/TED.2018.2888871, 2019-02
  • 27 S. Hong, J. Shin, Y. Hong, M. Wu, Y. Jeong, D. Jang, G. Jung, J.-H. Bae, and J.-H. Lee "Humidity-Sensitive Field Effect Transistor with In2O3 Nanoparticles as a Sensing Layer" Journal of nanoscience and nanotechnology, vol. 19, no. 10, pp. 6656-6662, doi: 10.1166/jnn.2019.17092, 2019-10
  • 26 D. Kwon, S. Lim, J.-H. Bae, S.-T. Lee, H. Kim, C.-H. Kim, B.-G. Park, and J.-H. Lee "Adaptive Weight Quantization Method for Nonlinear Synaptic Devices" IEEE Transactions on Electron Devices, vol. 66, no. 1, pp.395-401, doi: 10.1109/TED.2018.2879821, 2019-01
  • 25 J.-H. Bae, S. Lim, D. Kwon, S.-T. Lee, H. Kim, and J.-H. Lee "Gated Schottky Diode-Type Synaptic Device with a Field-Plate Structure to Reduce the Forward Current" Journal of Nanoscience and Nanotechnology, vol.19, no. 10, pp. 6135-6138, doi: 10.1166/jnn.2019.17003, 2019-10
  • 24 C.-H. Kim, S. Lim, S. Y. Woo, W.-M. Kang, Y.-T. Seo, S. T. Lee, S. Lee, D. Kwon, S. Oh, Y. Noh, H. Kim, J. Kim, J.-H. Bae, and J.-H. Lee "Emerging memory technologies for neuromorphic computing" Nanotechnology, vol. 30, no. 3, p. 032001, doi: 10.1088/1361-6528/aae975, 2018-11
  • 23 S.-T. Lee, S. Lim, N. Choi, J.-H. Bae, D. Kwon, B.-G. Park, and J.-H. Lee "Operation Scheme of Multi-Layer Neural Networks Using NAND Flash Memory as High-Density Synaptic Devices" IEEE Journal of the Electron Device Society, vol. 7, pp. 1085-1093, doi: 10.1109/JEDS.2019.2947316, 2019-10
  • 22 S. Lim, J.-H. Bae, J.-H. Eum, S. Lee, C.-H. Kim, D. Kwon, B.-G. Park, and J.-H. Lee "Adaptive learning rule for hardware-based deep neural networks using electronic synapse devices" Neural Computing & Applications, vol. 31, no. 11, pp. 8101-8116, doi: 10.1007/s00521-018-3659-y, 2019-11
  • 21 K.-B. Choi, S.-Y. Woo, W.-M. Kang, S. Lee, C.-H. Kim, J.-H. Bae, and J.-H. Lee "A Split-Gate Positive Feedback Device with an Integrate-and-Fire Capability for a High-Density Low-Power Neuron Circuit" Frontiers in Neuroscience, vol. 12, no. 704, pp. 1-13, doi: 10.3389/fnins.2018.00704, 2018-10
  • 20 S. Hong, J. Shin, Y. Hong, M. Wu, D. Jang, Y. Jeong, G. Jung, J.-H. Bae, H. W. Jang and J.-H. Lee "Observation of physisorption in a high-performance FET-type oxygen gas sensor operating at room temperature" Nanoscale, vol. 10, no. 37, pp. 18019-18027, doi: 10.1039/C8NR04472D, 2018-09
  • 19 S. Hong, Y. Hong, Y. Jeong, G. Jung, W. Shin, J. Park, J.-K. Lee, D. Jang, J.-H. Bae, and J.-H. Lee "Improved CO gas detection of Si MOSFET gas sensor with catalytic Pt decoration and pre-bias effect" Sensors and Actuators B: Chemical, vol. 300, p. 127040, doi: 10.1016/j.snb.2019.127040, 2019-12
  • 18 M.-K. Park, H.-N. Yoo, Y.-T. Seo, S. Y. Woo, J.-H. Bae, B.-G. Park, and J.-H. Lee "Field Effect Transistor-Type Devices Using High-κ Gate Insulator Stacks for Neuromorphic Applications" ACS Applied Electronic Materials, vol. 2, no. 2, pp. 323-328, doi: 10.1021/acsaelm.9b00698, 2019-12
  • 17 C.-H. Kim, S. Lee, S. Y. Woo, W.-M. Kang, S. Lim, J.-H. Bae, J. Kim and J.-H. Lee "Demonstration of Unsupervised Learning with Spike-Timing-Dependent Plasticity using a TFT type NOR Flash Memory Array" IEEE Transactions on Electron Devices, vol. 65, no. 5, pp. 1774-1780, doi: 10.1109/TED.2018.2817266, 2018-05
  • 16 J. Shin, Y. Hong, M. Wu, J.-H. Bae, H.-I. Kwon, B.-G. Park, and J.-H. Lee "An accurate and stable humidity sensing characteristic of Si FET-type humidity sensor with MoS2 as a sensing layer by pulse measurement" Sensors and Actuators B: Chemical, vol. 258, pp. 574-579, doi: 10.1016/j.snb.2017.11.132, 2018-04
  • 15 Y. Hong, M. Wu, J.-H. Bae, S. Hong, Y. Jeong, D. Jang, J. S. Kim, C. S. Hwang, B.-G. Park, and J.-H. Lee "A new sensing mechanism of Si FET-based gas sensor using pre-bias" Sensors and Actuators B: Chemical, vol. 302, p. 127147, doi: 10.1016/j.snb.2019.127147, 2020-01